Presentation
5 March 2021 THz emission from n-type Ge/SiGe quantum cascade structures
Author Affiliations +
Abstract
We report electroluminescence at 14meV and 20meV from a n-type Ge/Si0.15Ge0.85 quantum cascade heterostructure on Si substrate grown by ultra-high vacuum chemical vapour deposition. The electroluminescence signal of the single quantum well active region design, extracted through diffraction gratings from mesa structures, is compared with its GaAs counterpart.The spectral features agree well with modeling based on Non-equilibrium Green's function calculations. The observed electroluminescence peaks show a full width at half maximum of 3meV and 4meV. These results are an important step towards the realization of an n-type THz quantum cascade laser on a non-polar material system.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Stark, Muhammad M. A. Mirza, Luca Persichetti, Michele Montanari, Luciana Di Gaspare, Monica De Seta, Michele Virgilio, Michele Ortolani, Giovanni Capellini, Thomas Grange, Stefan Birner, Douglas J. Paul, Jérôme Faist, and Giacomo Scalari "THz emission from n-type Ge/SiGe quantum cascade structures", Proc. SPIE 11685, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIV, 116851A (5 March 2021); https://doi.org/10.1117/12.2578823
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KEYWORDS
Terahertz radiation

Quantum cascade lasers

Electroluminescence

FT-IR spectroscopy

Quantum wells

Electrons

Laser applications

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