Presentation
5 March 2021 Side-by-side comparison of pre- and post-transferred LEDs grown on 2D hexagonal boron nitride onto arbitrary substrates
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Abstract
We present a critical study of LEDs on h-BN compared to the conventional LEDs on sapphire from materials characterizations, device fabrication to the device performances measurements performed before and after liftoff and transfer with and without intermediary adhesion layer to arbitrary substrates
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, Ashutosh Srivastava, Rajat Gujrati, Ali Ahaitouf, Paul L. Voss, Jean-Paul Salvestrini, and Abdallah Ougazzaden "Side-by-side comparison of pre- and post-transferred LEDs grown on 2D hexagonal boron nitride onto arbitrary substrates", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 1168619 (5 March 2021); https://doi.org/10.1117/12.2577275
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KEYWORDS
Light emitting diodes

Boron

Heterojunctions

3D metrology

Material characterization

Materials processing

Measurement devices

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