Paper
15 January 1990 System Implications Of Radiation-Induced Long Term Transients In High Speed Optical Receivers
W. N. Herman, W. A. Rosen, A. S. Kanofsky
Author Affiliations +
Abstract
Results are presented on the in-situ radiation response of three commercial hybrid optical receivers of the type used in high speed fiber optic networks. When subjected to a 2.5 MeV pulsed electron beam, a receiver that contained a GaAs MESFET was found to exhibit transient effects in response to a dose as low as ~50 Rads. Two other receivers containing no GaAs FETs suffered little or no amplitude perturbation on exposure to 200 - 400 Rads(GaAs) per pulse. The radiation response of the first receiver is shown to be consistent with the long term transient response of conventional GaAs MESFETs. Implications for circuit design and for several high speed data buses are discussed.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. N. Herman, W. A. Rosen, and A. S. Kanofsky "System Implications Of Radiation-Induced Long Term Transients In High Speed Optical Receivers", Proc. SPIE 1174, Fiber Optics Reliability: Benign and Adverse Environments III, (15 January 1990); https://doi.org/10.1117/12.963237
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KEYWORDS
Receivers

Field effect transistors

Gallium arsenide

Optical amplifiers

Electron beams

Radiation effects

Fiber amplifiers

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