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In this presentation, we will describe our results with field-emission type source and drain contacts in which the metal electrodes are tapered to a sharp point or an array of sharp points. The enhanced electric field as a consequence of this geometry results in more facile injection of charges from the metal to the band states of the semiconductor. The on-resistance of short channel TFTs is lowered and the channel lengths of TFTs can be reduced below 100 nm without adversely affecting the shape of the current-voltage characteristics.
Ananth Dodabalapur
"Rethinking the contact resistance bottleneck in organic and polymer thin-film transistors", Proc. SPIE 11811, Organic and Hybrid Field-Effect Transistors XX, 118110A (3 August 2021); https://doi.org/10.1117/12.2597243
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Ananth Dodabalapur, "Rethinking the contact resistance bottleneck in organic and polymer thin-film transistors," Proc. SPIE 11811, Organic and Hybrid Field-Effect Transistors XX, 118110A (3 August 2021); https://doi.org/10.1117/12.2597243