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12 October 2021 28nm-pitch Ru interconnects patterned with a 0.33NA-EUV single exposure
Sayantan Das, Nicola Kissoon, Mahmudul Hasan, Luc Rynders, Luka Kljucar, Sandip Halder, Philippe Leray, Mircea Dusa, David Rio, Mahmoud Mohsen, Chris Spence, Etienne De Poortere
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Proceedings Volume 11854, International Conference on Extreme Ultraviolet Lithography 2021; 118540C (2021) https://doi.org/10.1117/12.2600937
Event: SPIE Photomask Technology + EUV Lithography, 2021, Online Only
Abstract
In this work we studied the impact of stochastic resist defects on electrical measurements of BEOL structures, and seek to demonstrate that large electrical test structures, built with a relatively simple patterning flow, can be used in the early stages of resist, and patterning development, as the electrical failures are almost exclusively caused by resist defects. To that end, single-layer electrically testable metal patterns at minimum metal pitch of 28nm were created using a single 0.33NA-EUV exposure and a metal damascene process flow. A bright field mask was exposed with a metal-organic, negative-tonedevelopment resist process to create trench structures that are transferred into an oxide dielectric layer. Following this, the trenches were filled with ruthenium (Ru) for electrical testing of meander resistor and fork-fork structures.
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Sayantan Das, Nicola Kissoon, Mahmudul Hasan, Luc Rynders, Luka Kljucar, Sandip Halder, Philippe Leray, Mircea Dusa, David Rio, Mahmoud Mohsen, Chris Spence, and Etienne De Poortere "28nm-pitch Ru interconnects patterned with a 0.33NA-EUV single exposure", Proc. SPIE 11854, International Conference on Extreme Ultraviolet Lithography 2021, 118540C (12 October 2021); https://doi.org/10.1117/12.2600937
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KEYWORDS
Stochastic processes
Ruthenium
Semiconducting wafers
Extreme ultraviolet lithography
Inspection
Line edge roughness
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