Process Development And Control Using Total Reflection X-Ray Fluorescence (TXRF) For Surface Analysis

R. S. Hockett

doi:10.1117/12.963912

5 February 1990 Process Development And Control Using Total Reflection X-Ray Fluorescence (TXRF) For Surface Analysis

R. S. Hockett

Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963912
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

A new x-ray analytical technique, Total reflection X-Ray Fluorescence (TXRF) analysis, is now available for process development and control of heavy metal surface impurities in microelectronic integrated processing. The detection limits are on the order of 1011 atoms/cm2, several orders of magnitude better than Auger electron spectroscopy and electron spectroscopy for chemical analysis. The measurements are also quantitative in the top 3-4 nm of the surface, unlike secondary ion mass spectrometry. TXRF data are presented to support the quantification method, to show the stability of the measurement procedure, and to demonstrate application to process development of dry etching, ion implantation, and rapid thermal annealing, and process control of substrate cleaning. In addition, the TXRF signal change with incident angle is used to distinguish plated contamination from residue or particulate contamination.

Citation Download Citation

R. S. Hockett "Process Development And Control Using Total Reflection X-Ray Fluorescence (TXRF) For Surface Analysis", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); https://doi.org/10.1117/12.963912

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