Paper
23 February 1990 Critical Current Density Measurements In High Tc "Insitu" YBa2Cu3O7-8 Superconducting Thin Films
C. B. Lee, R. K. Singh, P. Tiwari, J. Narayan
Author Affiliations +
Proceedings Volume 1190, Laser/Optical Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963979
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
Critical current density measurements have been made on in-situ processed and patterned, laser deposited thin films.These films were deposited on LaA103 and KTa03 with substrate temperatures ranging at from 500-650°C. Epitaxial growth was achieved as targets of Y (123) and Y (123) Ag3 were ablated by an excimer laser in an oxygen ambient atmosphere. A steel mask was placed near the substrate to pattern the films. Transport critical current density was measured as a function of temperature in order to ascertain any role flux pinning may play in determining critical current density.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. B. Lee, R. K. Singh, P. Tiwari, and J. Narayan "Critical Current Density Measurements In High Tc "Insitu" YBa2Cu3O7-8 Superconducting Thin Films", Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); https://doi.org/10.1117/12.963979
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KEYWORDS
Superconductors

Thin films

Technetium

Silver

Laser processing

Oxygen

Thin film deposition

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