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GaAs-based high-power laser diodes in the 9xx nm wavelength-range are at the heart of modern materials processing systems. The continuing increase in reliable operating power and efficiency of these diodes has been one of the driving factors behind their wide adoption in fiber laser and direct diode systems and has been a major factor fueling the growth of the materials processing market.
II-VI as a leading manufacturer of both VCSEL and edge-emitting GaAs-based laser diodes has pioneered the adoption of 6-inch GaAs laser diode technology in high-volume manufacturing. In this presentation we will review the developments of the high power pump laser diode market in recent years that required the adoption of larger diameter wafer substrates, discuss selected highlights and challenges of our 6-inch GaAs laser production, and present latest chip performance results.
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René Todt, Stefan Deubert, Dominik Jaeggi, "High-volume manufacturing of state-of-the-art high-power laser diodes on 6-inch GaAs," Proc. SPIE 11983, High-Power Diode Laser Technology XX, 1198303 (4 March 2022); https://doi.org/10.1117/12.2611047