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4 March 2022 Silicon photonics avalanche photodetector behavioral model
Jinsung Youn, Peng Sun, Mudit Jain, Marco Fiorentino, Raymond G. Beausoleil
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Proceedings Volume 11995, Physics and Simulation of Optoelectronic Devices XXX; 119950J (2022) https://doi.org/10.1117/12.2608230
Event: SPIE OPTO, 2022, San Francisco, California, United States
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Abstract
We present an avalanche photodetector (APD) behavioral modeling methodology for Silicon Photonics process design kit. The proposed APD behavioral model can describe nonlinearity of multiplication factors versus both bias voltage and input optical power, and it can also cover process-voltage-temperature (PVT) variations. Inside the APD model, built-in lookup tables that contain multiple coefficients are implemented, therefore nonlinear multiplication factor curves can be easily calculated with an automated coefficient setting algorithm which helps to streamline the verification process and reduce model parameter setting time without sacrificing accuracy. Specifically, as coefficients are derived from different PVT conditions, the proposed APD behavioral model has wide verification coverage.
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Jinsung Youn, Peng Sun, Mudit Jain, Marco Fiorentino, and Raymond G. Beausoleil "Silicon photonics avalanche photodetector behavioral model", Proc. SPIE 11995, Physics and Simulation of Optoelectronic Devices XXX, 119950J (4 March 2022); https://doi.org/10.1117/12.2608230
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KEYWORDS
Avalanche photodetectors
Silicon photonics
Electronic circuits
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