Presentation + Paper
14 March 2023 9W tapered laser diodes with high beam quality at 760nm
C. Mourikis, D. Feise, H. Wenzel, P. Della Casa, K. Paschke, G. Tränkle
Author Affiliations +
Proceedings Volume 12403, High-Power Diode Laser Technology XXI; 124030G (2023) https://doi.org/10.1117/12.2648712
Event: SPIE LASE, 2023, San Francisco, California, United States
Abstract
In recent years, lasers in the wavelength range of 760 nm are getting more and more popular as they are needed in a greater variety of applications like nanometrology, sensors or material analysis. Thus, devices with high optical power and good beam quality are in great demand at these wavelengths. Another need is lasers with very small dimensions. Many of these applications are in “out of the lab” environments with limited space and in hazard conditions; for example, in space and planets exploration. In this context, tapered lasers (TPLs) are very promising candidates to fulfil these needs. TPLs can reach very high optical powers with excellent beam qualities, as individual diode lasers or in laser modules with very small dimensions. In this work, we present our results concerning the development of our new TPLs at 760 nm. We show two different epitaxial laser structures that we used to build these diode lasers. For this purpose, a GaAs0.75P0.25 single quantum well was used as active region. The lasers were mounted p-side up onto conductively cooled heat sinks for continuous-wave operation, which allows separate driving currents for the ridge (RW) and tapered (TA) sections. Also, we compare tapered laser diodes with different lengths of the ridge waveguide section and will show the influence of these parameters on the electro-optical performance of the tapered diode lasers. The mounted lasers feature an optical output power of more than 9 W, a conversion efficiency of more than 50 % at a heat-sink temperature of 15 °C and nearly diffraction limited emission.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Mourikis, D. Feise, H. Wenzel, P. Della Casa, K. Paschke, and G. Tränkle "9W tapered laser diodes with high beam quality at 760nm", Proc. SPIE 12403, High-Power Diode Laser Technology XXI, 124030G (14 March 2023); https://doi.org/10.1117/12.2648712
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KEYWORDS
Semiconductor lasers

Waveguides

Electro optics

Quantum wells

Beam divergence

Gallium arsenide

Laser development

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