Presentation + Paper
14 March 2023 Low-noise AlGaAsSb avalanche photodiodes for 1550 nm light detection
Xiao Collins, Benjamin Sheridan, David Price, Ye Cao, Tarick Blain, Jo Shien Ng, Chee Hing Tan, Benjamin White
Author Affiliations +
Proceedings Volume 12417, Optical Components and Materials XX; 124170K (2023) https://doi.org/10.1117/12.2651669
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Avalanche photodiodes (APD) can improve the signal to noise ratio in applications such as LIDAR, range finding and optical time domain reflectometry. However, APDs operating at eye-safe wavelengths around 1550 nm currently limit the sensitivity because the APDs’ impact ionization coefficients in the avalanche layers are too similar, leading to poor excess noise performance. The material AlGaAsSb has highly dissimilar impact ionization coefficients (with electrons dominating the avalanche gain) so is an excellent avalanche material for 1550 nm wavelength APDs. We previously reported a 1550 nm wavelength AlGaAsSb SAM APD with extremely low excess noise factors, 1.93 at a gain of 10 and 2.94 at a gain of 20. Using a more optimized design, we have now realized an AlGaAsSb SAM APD with a lower dark current (7 nA at a gain of 10 from a 230 μm diameter APD), a higher responsivity (0.97 A/W) and a lower excess noise (1.9 at a gain of 40), compared to our previous SAM APD. Noise-equivalent-power (NEP) measurements of our APD with a simple transimpedance amplifier circuit produced an NEP 12 times lower than a state-of-the-art APD under identical test conditions, confirming the advantage of low-noise AlGaAsSb SAM APDs.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiao Collins, Benjamin Sheridan, David Price, Ye Cao, Tarick Blain, Jo Shien Ng, Chee Hing Tan, and Benjamin White "Low-noise AlGaAsSb avalanche photodiodes for 1550 nm light detection", Proc. SPIE 12417, Optical Components and Materials XX, 124170K (14 March 2023); https://doi.org/10.1117/12.2651669
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KEYWORDS
Avalanche photodetectors

Dark current

Avalanche photodiodes

Ionization

Signal to noise ratio

Amplifiers

Indium gallium arsenide

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