Monolithically integratable broad-band anti-reflection stacks for Si photonics platforms

Fei Sun; Mikko Harjanne; Päivi Heimala; Markku Kapulainen; Timo Aalto

doi:10.1117/12.2647717

17 March 2023 Monolithically integratable broad-band anti-reflection stacks for Si photonics platforms

Fei Sun, Mikko Harjanne, Päivi Heimala, Markku Kapulainen, Timo Aalto

Proceedings Volume 12424, Integrated Optics: Devices, Materials, and Technologies XXVII; 124240Y (2023) https://doi.org/10.1117/12.2647717
Event: SPIE OPTO, 2023, San Francisco, California, United States

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Abstract

Based on commonly used dielectric materials in Si processing platforms, multiple-layer anti-reflection stacks were designed and fabricated, with the main goal of highly efficient light coupling for Si waveguides over a wide wavelength range. Initial characterization results indicate that a <-20dB light reflection was successfully achieved over 1310-1550 nm wavelength range over the whole 150mm wafer. The fluctuation of reflection spectra over the whole wafer was observed to be only 1-2 dB, which guarantees the high yield and mass production capabilities for further applications.

Citation Download Citation

Fei Sun, Mikko Harjanne, Päivi Heimala, Markku Kapulainen, and Timo Aalto "Monolithically integratable broad-band anti-reflection stacks for Si photonics platforms", Proc. SPIE 12424, Integrated Optics: Devices, Materials, and Technologies XXVII, 124240Y (17 March 2023); https://doi.org/10.1117/12.2647717

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