Lithographic performance of resist ma-N 1402 in an e-beam/i-line stepper intra-level mix and match approach

C. H. Canpolat-Schmidt; G. Heldt; C. Helke; A. Voigt; D. Reuter

doi:10.1117/12.2639447

1 November 2022 Lithographic performance of resist ma-N 1402 in an e-beam/i-line stepper intra-level mix and match approach

C. H. Canpolat-Schmidt, G. Heldt, C. Helke, A. Voigt, D. Reuter

Author Affiliations +

Proceedings Volume 12472, 37th European Mask and Lithography Conference; 124720J (2022) https://doi.org/10.1117/12.2639447
Event: 37th European Mask and Lithography Conference, 2022, Leuven, Belgium

Abstract

In this paper, we describe a lithographic technique of exposing complex patterns with an advanced resist processing that connects the high resolution of electron beam lithography and the fast exposure of optical i-line stepper lithography via an Intra Level Mix and Match (ILM&M) approach. The key element of our approach is that we use two successive exposures on one single resist layer directly followed by a single resist development. Process and resist characterization of negative tone resist ma-N 1402 as well as a resolution study for each lithographic tools involved. Lithographic performance of negative tone resist ma-N 1402 has shown structures with dimensions of 55 nm with 300 nm pitch for ebeam lithography (VISTEC SB254, shaped beam) and 350 nm structures for i-line stepper (Nikon NSR 2205i11D). Resist footing problem in structures exposed by i-line stepper is solved by introducing a 200 nm thick bottom antireflective coating AZ BARLI II in ILM&M resist processing sequence. A general processing recipe for electron beam/i-line stepper ILM&M with negative tone resist ma-N 1402 is successfully developed and patterns with different dimensions ranging from sub 100 nm to μm scale were reproducibly fabricated on the same resist layer.

Citation Download Citation

C. H. Canpolat-Schmidt, G. Heldt, C. Helke, A. Voigt, and D. Reuter "Lithographic performance of resist ma-N 1402 in an e-beam/i-line stepper intra-level mix and match approach", Proc. SPIE 12472, 37th European Mask and Lithography Conference, 124720J (1 November 2022); https://doi.org/10.1117/12.2639447

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KEYWORDS

Electron beam lithography

Lithography

Photoresist processing

Scanning electron microscopy

Beam shaping

Bottom antireflective coatings

Silicon

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