Microstructure-property studies for semiconductor interfaces using high-resolution electron microscopy

Robert Sinclair

doi:10.1117/12.20794

1 October 1990 Microstructure-property studies for semiconductor interfaces using high-resolution electron microscopy

Robert Sinclair

Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20794
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Interface structure can play a critical role in determining the properties of microelectronic devices. Because morphological features on the sub-nanometer scale are often involved, high resolution electron microscopy (HREM) is becoming increasingly used as a characterization tool. The application of HREM is illustrated in this article by reference to work on Si-Si02 and Ti-Si interfaces, which are both important in contemporary integratei circuits. q

Citation Download Citation

Robert Sinclair "Microstructure-property studies for semiconductor interfaces using high-resolution electron microscopy", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20794

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