Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD

J. Yoshinaga; K. Ikejiri; S. Koseki; K. Uesugi; H. Miyake

doi:10.1117/12.2692614

8 March 2024 Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD

J. Yoshinaga, K. Ikejiri, S. Koseki, K. Uesugi, H. Miyake

Author Affiliations +

Proceedings Volume 12886, Gallium Nitride Materials and Devices XIX; 128860B (2024) https://doi.org/10.1117/12.2692614
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

In this study, growth of crack-free AlGaN-based UVC LEDs using face-to-face high-temperature annealed AlN templates on 6-inch sapphire substrates was investigated by production scale metal-organic chemical vapor deposition (MOCVD). The utilization of face-to-face annealed sputtered-deposited thin AlN films templates successfully mitigated wafer bowing, leading to crack-free growth. Additionally, single-peak UVC emissions were obtained in the growth of 6-inch × 7-wafers, and the in-plane uniformity of (Max – Min) / Average was approximately 1.6%. Face-to-face high-temperature annealed AlN proves to be suitable for growing large-diameter UVC LEDs wafers, paving the way for mass production.

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(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

J. Yoshinaga, K. Ikejiri, S. Koseki, K. Uesugi, and H. Miyake "Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD", Proc. SPIE 12886, Gallium Nitride Materials and Devices XIX, 128860B (8 March 2024); https://doi.org/10.1117/12.2692614

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