An experimental stitching study on the eve of high-NA EUV

Vincent Wiaux; Natalia Davydova; Lieve Van Look; Nick Pellens; Ataklti Weldeslassie; Guillaume Libeert; Tatiana Kovalevich; Frank Timmermans; Laura Huddleston

doi:10.1117/12.3010895

10 April 2024 An experimental stitching study on the eve of high-NA EUV

Vincent Wiaux, Natalia Davydova, Lieve Van Look, Nick Pellens, Ataklti Weldeslassie, Guillaume Libeert, Tatiana Kovalevich, Frank Timmermans, Laura Huddleston

Author Affiliations +

Proceedings Volume 12953, Optical and EUV Nanolithography XXXVII; 129530J (2024) https://doi.org/10.1117/12.3010895
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

The combination of High NA EUV anamorphic projection optics and unchanged mask-blank size result in a “High NA field” with a maximum size of 26x16.5 mm² at wafer level. Therefore, to create a die larger than the High NA full field, two images are stitched together. So-called in-die stitching is enabled by a combination of design, mask, OPC, process, and scanner solutions. We present an overview of our learnings about at-resolution stitching based on a representative experimental study at NA=0.33, in preparation for tomorrow’s NA=0.55. For a pitch 28nm vertical line-space, optimum conditions are confirmed experimentally to create a robust stitch. A P28 LS is measured post-stitching utilizing either a Ta absorber or a low-n absorber. For the latter, the higher reflectivity is experimentally mitigated by using sub-resolution-gratings. We also quantify the imaging impact of the transition between the absorber and the black border in the stitching region.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Vincent Wiaux, Natalia Davydova, Lieve Van Look, Nick Pellens, Ataklti Weldeslassie, Guillaume Libeert, Tatiana Kovalevich, Frank Timmermans, and Laura Huddleston "An experimental stitching study on the eve of high-NA EUV", Proc. SPIE 12953, Optical and EUV Nanolithography XXXVII, 129530J (10 April 2024); https://doi.org/10.1117/12.3010895

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