An alternative EUV photoresist system

Masato Suzuki; Rikio Kozaki; Yida Liu; Tetsumasa Takaichi; Toshiya Okamura; YoungJin Kim; YoungJun Her; Hengpeng Wu; Kun Si; Chenyang Ma; Mark Maturi; Philipp H. Fackler; Mansour Moinpour; Ralph Dammel; Yi Cao

doi:10.1117/12.3012914

10 April 2024 An alternative EUV photoresist system

Masato Suzuki, Rikio Kozaki, Yida Liu, Tetsumasa Takaichi, Toshiya Okamura, YoungJin Kim, YoungJun Her, Hengpeng Wu, Kun Si, Chenyang Ma, Mark Maturi, Philipp H. Fackler, Mansour Moinpour, Ralph Dammel, Yi Cao

Author Affiliations +

Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 129570T (2024) https://doi.org/10.1117/12.3012914
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

Built on the previous study on the negative-tone resist platform, we developed a series of new resists with higher thermal stability enabling PEB temperature above 80°C, with improved pattern quality. Peripheral materials, including developers and under layers, are investigated as well to mitigate pattern collapse and enable patterning line/space below 32nm pitch with LER of 3nm or less. The resists are also capable of printing pillar pattern below 34nm pitch with LCDU below 3nm. A combination of EUV and DSA rectification processes reduces cost of ownership (COO) and attains low roughness with defectivity improvement potentially. The process has great potential in extending resolution below 28nm pitch using 0.33 NA EUV.

Conference Presentation

Citation Download Citation

Masato Suzuki, Rikio Kozaki, Yida Liu, Tetsumasa Takaichi, Toshiya Okamura, YoungJin Kim, YoungJun Her, Hengpeng Wu, Kun Si, Chenyang Ma, Mark Maturi, Philipp H. Fackler, Mansour Moinpour, Ralph Dammel, and Yi Cao "An alternative EUV photoresist system", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129570T (10 April 2024); https://doi.org/10.1117/12.3012914

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