EUV sensitivity and PEB stability of Sn-12 clusters for EUVL

Yeo Kyung Kang; Heeju Kim; Sun Jin Lee; Dong-Seok Oh; Yang-Hun Yoon; Chang-Jun Kim; Geun Young Yeom; Chan-Cuk Hwang; Myung-Gil Kim

doi:10.1117/12.3023154

10 April 2024 EUV sensitivity and PEB stability of Sn-12 clusters for EUVL

Yeo Kyung Kang, Heeju Kim, Sun Jin Lee, Dong-Seok Oh, Yang-Hun Yoon, Chang-Jun Kim, Geun Young Yeom, Chan-Cuk Hwang, Myung-Gil Kim

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Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 129572D (2024) https://doi.org/10.1117/12.3023154
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

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Abstract

The semiconductor industry is currently transitioning to advanced extreme-ultraviolet lithography (EUVL) to address the challenges facing the use of photolithography in microprocessor and memory chip integration. This shift has sparked a surge in novel inorganic EUV photoresist research. However, several technical issues, such as insufficient EUV sensitivity, poor understanding of the photochemistry, and poor stability, have emerged. Here, we synthesized [(BuSn)₁₂O₁₄(OH)₆](CH₃C₆H₄SO₃)₂ (TinTos) as a standard EUV photoresist. Chemical analysis (PXRD, NMR) was performed to confirm that the synthesized TinTos was well reproduced. As a result of EUV exposure, TinTos showed low sensitivity compared to the dose required in industry (<50 mJ/cm²). However, no enhancement in the DUV sensitivity was observed for TinTos after PEB. Consequently, we anticipate less time-dependent behavior of TinTos.

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Yeo Kyung Kang, Heeju Kim, Sun Jin Lee, Dong-Seok Oh, Yang-Hun Yoon, Chang-Jun Kim, Geun Young Yeom, Chan-Cuk Hwang, and Myung-Gil Kim "EUV sensitivity and PEB stability of Sn-12 clusters for EUVL", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129572D (10 April 2024); https://doi.org/10.1117/12.3023154

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