Biasing impact on illuminated SiGe heterojunction phototransistor static performances

Valentin Thary; Catherine Algani; Jean-Luc Polleux; Pascal Chevalier

doi:10.1117/12.3016450

18 June 2024 Biasing impact on illuminated SiGe heterojunction phototransistor static performances

Valentin Thary, Catherine Algani, Jean-Luc Polleux, Pascal Chevalier

Proceedings Volume 13012, Integrated Photonics Platforms III; 130120I (2024) https://doi.org/10.1117/12.3016450
Event: SPIE Photonics Europe, 2024, Strasbourg, France

Abstract

A new low-cost BiCMOS Heterojunction Bipolar Phototransistor (HPT) is fabricated for the first time in an industrial BiCMOS technology from STMicroelectronics with a “no change in process” approach. The static responsivity as a function of the biasing is determined from measurements at 850 nm for various HPT designs. Devices with a static responsivity level up to 40 A/W at 2.5V collector-emitter voltage biasing can be achieved when the device operates near its breakdown voltage. In its active region, at V_CE = 1V, a static responsivity level up to 12.2 A/W was obtained selecting the appropriate base biasing.

Conference Presentation

Citation Download Citation

Valentin Thary, Catherine Algani, Jean-Luc Polleux, and Pascal Chevalier "Biasing impact on illuminated SiGe heterojunction phototransistor static performances", Proc. SPIE 13012, Integrated Photonics Platforms III, 130120I (18 June 2024); https://doi.org/10.1117/12.3016450

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