Interfacial layer engineering for graphene/InSb heterojunction-based high-performance mid-infrared photodiodes using photogating

Masaaki Shimatani; Shoichiro Fukushima; Manabu Iwakawa; Shinpei Ogawa

doi:10.1117/12.3012837

7 June 2024 Interfacial layer engineering for graphene/InSb heterojunction-based high-performance mid-infrared photodiodes using photogating

Masaaki Shimatani, Shoichiro Fukushima, Manabu Iwakawa, Shinpei Ogawa

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Proceedings Volume 13046, Infrared Technology and Applications L; 130461Y (2024) https://doi.org/10.1117/12.3012837
Event: SPIE Defense + Commercial Sensing, 2024, National Harbor, Maryland, United States

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Abstract

Graphene/semiconductor heterojunction photodiodes that use photogating are expected to perform better than conventional infrared (IR) photodetectors. However, interface instability limits has prevented the realization of the theoretically predicted performance and high reliability for these devices. This study focuses on optimizing the material and thickness of an interfacial layer in a graphene/InSb heterojunction to achieve a high-performance mid-IR photodetector. The results indicate that HfO2 is a more suitable material than Al2O3 for the interfacial layer, and 1-2 nm is the thickness that best promotes effective photocurrent transport. This interfacial layer can facilitate the fabrication of superior IR image sensors based on graphene/InSb heterojunctions.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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Masaaki Shimatani, Shoichiro Fukushima, Manabu Iwakawa, and Shinpei Ogawa "Interfacial layer engineering for graphene/InSb heterojunction-based high-performance mid-infrared photodiodes using photogating", Proc. SPIE 13046, Infrared Technology and Applications L, 130461Y (7 June 2024); https://doi.org/10.1117/12.3012837

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