Demonstrating sub-electron noise performance in single electron sensitive readout (SiSeRO) devices

Tanmoy Chattopadhyay; Sven Herrmann; Peter Orel; Kevan Donlon; Steven W. Allen; Marshall W. Bautz; Brianna J. Cantrall; Michael Cooper; Beverly LaMarr; Christopher Leitz; Eric Miller; Glenn R. Morris; Abigail Y. Pan; Gregory Prigozhin; Ilya Prigozhin; Haley Stueber; Daniel R. Wilkins

doi:10.1117/12.3020855

27 August 2024 Demonstrating sub-electron noise performance in single electron sensitive readout (SiSeRO) devices

Tanmoy Chattopadhyay, Sven Herrmann, Peter Orel, Kevan Donlon, Steven W. Allen, Marshall W. Bautz, Brianna J. Cantrall, Michael Cooper, Beverly LaMarr, Christopher Leitz, Eric Miller, Glenn R. Morris, Abigail Y. Pan, Gregory Prigozhin, Ilya Prigozhin, Haley Stueber, Daniel R. Wilkins

Author Affiliations +

Proceedings Volume 13103, X-Ray, Optical, and Infrared Detectors for Astronomy XI; 1310312 (2024) https://doi.org/10.1117/12.3020855
Event: SPIE Astronomical Telescopes + Instrumentation, 2024, Yokohama, Japan

Abstract

Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detection technology that can, in principle, provide significantly greater responsivity and improved noise performance than traditional charge coupled device (CCD) readout circuitry. The SiSeRO, developed by MIT Lincoln Laboratory, uses a p-MOSFET transistor with a depleted back-gate region under the transistor channel; as charge is transferred into the back gate region, the transistor current is modulated. With our first generation SiSeRO devices, we previously achieved a responsivity of around 800pA per electron, an equivalent noise charge (ENC) of 4.5 electrons root mean square (RMS), and a full width at half maximum (FWHM) spectral resolution of 130eV at 5.9keV, at a readout speed of 625Kpixel/s and for a detector temperature of 250K. Importantly, since the charge signal remains unaffected by the SiSeRO readout process, we have also been able to implement Repetitive Non-Destructive Readout (RNDR), achieving an improved ENC performance. In this paper, we demonstrate sub-electron noise sensitivity with these devices, utilizing an enhanced test setup optimized for RNDR measurements, with excellent temperature control, improved readout circuitry, and advanced digital filtering techniques. We are currently fabricating new SiSeRO detectors with more sensitive and RNDR-optimized amplifier designs, which will help mature the SiSeRO technology in the future and eventually lead to the pathway to develop active pixel sensor (APS) arrays using sensitive SiSeRO amplifiers on each pixel. Active pixel devices with sub-electron sensitivity and fast readout present an exciting option for next generation, large area astronomical x-ray telescopes requiring fast, low-noise megapixel imagers.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Tanmoy Chattopadhyay, Sven Herrmann, Peter Orel, Kevan Donlon, Steven W. Allen, Marshall W. Bautz, Brianna J. Cantrall, Michael Cooper, Beverly LaMarr, Christopher Leitz, Eric Miller, Glenn R. Morris, Abigail Y. Pan, Gregory Prigozhin, Ilya Prigozhin, Haley Stueber, and Daniel R. Wilkins "Demonstrating sub-electron noise performance in single electron sensitive readout (SiSeRO) devices", Proc. SPIE 13103, X-Ray, Optical, and Infrared Detectors for Astronomy XI, 1310312 (27 August 2024); https://doi.org/10.1117/12.3020855

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