Imaging evaluation of low reflectivity low-n EUV mask for LS at 0.33NA

Tatiana Kovalevich; Nick Pellens; Guillaume Libeert; Lieve Van Look; Vicky Philipsen

doi:10.1117/12.3032310

26 August 2024 Imaging evaluation of low reflectivity low-n EUV mask for LS at 0.33NA

Tatiana Kovalevich, Nick Pellens, Guillaume Libeert, Lieve Van Look, Vicky Philipsen

Author Affiliations +

Proceedings Volume 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology; 131770O (2024) https://doi.org/10.1117/12.3032310
Event: Photomask Japan 2024, 2024, Yokohama, Japan

Abstract

Mask stacks comprising of alternative absorber materials with various optical properties (n and k values) may allow further improvements in EUV imaging. In a strive towards dose reduction and advancement of resolution limits in EUV lithography, such masks are brought up for consideration. In this work, we evaluate a novel low-n absorber mask with a low EUV absorber reflectivity for dark field Line/Space (LS) printing and compare it to a traditional Ta-based absorber mask. For the novel low-n mask, we experimentally confirm the reflectivity vs. the Ta-based reference mask. Through simulations and experiments at 0.33 numerical aperture (NA), we evaluate the LS imaging performance in terms of best focus through pitch. At the anchor LS pitch 28nm, we report the exposure latitude and the Mask Error Enhancement Factor (MEEF) and compare these metrics to the imaging performance of a Ta-based mask. This work adds understanding to the patterning benefits and limitations of alternative absorber mask stacks in the case of Metal direct print applications.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Tatiana Kovalevich, Nick Pellens, Guillaume Libeert, Lieve Van Look, and Vicky Philipsen "Imaging evaluation of low reflectivity low-n EUV mask for LS at 0.33NA", Proc. SPIE 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology, 131770O (26 August 2024); https://doi.org/10.1117/12.3032310

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE