Development of advanced EUV mask absorbers with various properties

Daisuke Miyawaki; Daisuke Sakurai; Yu Hasegawa; Hideaki Nakano; Itaru Yoshida; Kazunori Seki; Yosuke Kojima

doi:10.1117/12.3033972

12 November 2024 Development of advanced EUV mask absorbers with various properties

Daisuke Miyawaki, Daisuke Sakurai, Yu Hasegawa, Hideaki Nakano, Itaru Yoshida, Kazunori Seki, Yosuke Kojima

Author Affiliations +

Proceedings Volume 13215, International Conference on Extreme Ultraviolet Lithography 2024; 132150F (2024) https://doi.org/10.1117/12.3033972
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Abstract

New absorber materials are currently being developed for next-generation EUV lithography. In particular, the demand for low-refractive-index (low-n) materials has been increasing in recent years. There are many types of low-n materials, but deciding which material to use requires considering both wafer lithography and mask making perspectives. In this study, various types of low-n materials were evaluated through wafer lithography simulations and mask making assessments. Simulations were conducted and revealed the inherent strengths and weaknesses of each material, thereby providing a balanced perspective on their performance. In addition to the evaluation based on simulations, the actual mask processability of the absorbers was assessed.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Daisuke Miyawaki, Daisuke Sakurai, Yu Hasegawa, Hideaki Nakano, Itaru Yoshida, Kazunori Seki, and Yosuke Kojima "Development of advanced EUV mask absorbers with various properties", Proc. SPIE 13215, International Conference on Extreme Ultraviolet Lithography 2024, 132150F (12 November 2024); https://doi.org/10.1117/12.3033972

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