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In the past few years, there has been a rise in incidents involving gas leaks, raising serious concerns for human safety and well-being. It is of utmost importance to develop an advanced gas detection platform that ensures accurate identification of gases and enables timely alerts to prevent accidents. Field-effect transistor (FET) gas sensors have a significant role in real-time environmental monitoring, medical pre-diagnosis, industrial control, and other scenarios due to their unique ability to amplify gate electrode signals and detect even the smallest amounts of gases. In this study, we have developed a gas sensor based on carbon field effect transistor (FET) technology to detect hydrogen (H2) at room temperature. The sensing gate layer of the sensor consists of Pd/Ag, while the conductive channel is made up of carbon nanotubes (CNTs). To mitigate the negative effects caused by channel exposure, we have incorporated yttrium oxide as the gate dielectric layer. Our fabricated carbon-based FET gas sensor demonstrates an impressive detection limit of 70 ppm for H2 at ambient conditions and can effectively function as an early warning system for gas leakage incidents. Moreover, our designed sensor exhibits good selectivity, repeatability, and anti-humidity property. We anticipate that our research will contribute significantly to advancing high-performance and highly integrated trace gas sensors by establishing solid theoretical and experimental foundations.
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