Paper
18 September 2024 Modeling of multi-trigger resists
Author Affiliations +
Proceedings Volume 13273, 39th European Mask and Lithography Conference (EMLC 2024); 1327308 (2024) https://doi.org/10.1117/12.3027941
Event: 39th European Mask and Lithography Conference (EMLC 2024), 2024, Grenoble, France
Abstract
This paper addresses the development and modeling of a novel negative-tone photoresist, the Multi-Trigger Resist (MTR), aimed at enhancing extreme ultraviolet (EUV) lithography. The primary objectives are to create a stochastic model of the photoresist process flow and to analyze the behavior of MTR under various conditions. The model incorporates statistical fluctuations in photon distribution, secondary electron generation, and molecular distribution within the photoresist. Calibration with experimental data demonstrates the model’s capability in predicting critical dimension (CD), line width roughness (LWR), and dose-to-size (DtS) metrics. Results indicate that higher MTR loading and quencher addition improve performance consistency. Further investigation into different exposure types, electron blur lengths, and photoresist absorbance coefficients reveals the intricate balance required for optimizing lithographic outcomes. The findings underscore the model’s utility in guiding the design of next-generation photoresists and highlight areas for future research, including the expansion of calibration datasets and the application to various lithographic features.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Thiago J. dos Santos, Zelalem Belete, Andreas Erdmann, Alex P. G. Robinson, Carmen Popescu, and Alexandra McClelland "Modeling of multi-trigger resists", Proc. SPIE 13273, 39th European Mask and Lithography Conference (EMLC 2024), 1327308 (18 September 2024); https://doi.org/10.1117/12.3027941
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KEYWORDS
Photoresist materials

Line width roughness

Extreme ultraviolet lithography

Calibration

Lithography

Critical dimension metrology

Photoresist developing

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