Paper
1 October 1990 Laser-stimulated interdiffusion of components in a CdTe-CdxHg1-x Te structure
Yu. A. Bychkov, F. Kh. Mirzoyev, Vladislav Ya. Panchenko
Author Affiliations +
Proceedings Volume 1352, 1st Intl School on Laser Surface Microprocessing; (1990) https://doi.org/10.1117/12.23702
Event: International School on Laser Surface Microprocessing, 1989, Tashkent, Uzbekistan
Abstract
The CdTe and HgTe narrow-banth-gap seminconductor compounds and the solid solutions based on them (CdHg Te, 0.1 < x < 0.3) are promising materials for the manufacture of a number of semiconductor devices, such as IR radiation detectors, light-emitting diodes, and heterojunction lasers. This is precisely Ue eason why these materials have attracted widespread attention. At. present, laser radiation is being extensively used for altering the prope ties and structure of semiconductor layers. In this paper, we present the results of theoretical studies into the possibility of using lasei pulses to accele rat.e diffusion processes in structures the type of CdTe-CdHgTe.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu. A. Bychkov, F. Kh. Mirzoyev, and Vladislav Ya. Panchenko "Laser-stimulated interdiffusion of components in a CdTe-CdxHg1-x Te structure", Proc. SPIE 1352, 1st Intl School on Laser Surface Microprocessing, (1 October 1990); https://doi.org/10.1117/12.23702
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KEYWORDS
Diffusion

Mercury

Tellurium

Cadmium

Pulsed laser operation

Chemical species

Semiconductor lasers

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