Round-robin comparison of temperature nonuniformity during RTP due to patterned layers

Peter Vandenabeele; Karen Maex

doi:10.1117/12.25721

1 April 1991 Round-robin comparison of temperature nonuniformity during RTP due to patterned layers

Peter Vandenabeele, Karen Maex

Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25721
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Temperature non-uniformity caused by patterned layers during RTP is studied experimentally in six RTP-systems from different vendors. Rapid thermal oxidation and annealing are used to indirectly measure temperature non-uniformity. A good correlation is seen with theoretical predictions. The effect of a real-live pattern with LOCOS isolation is evaluated during the growth of a thin oxide by rapid thermal oxidation. The presence of thickness variations of the grown RTO oxide in the patterned areas and at the edge of the patterned region is discussed. 1.

Citation Download Citation

Peter Vandenabeele and Karen Maex "Round-robin comparison of temperature nonuniformity during RTP due to patterned layers", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.25721

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