New structure and method for fabricating InP/InGaAsP buried heterostructure semiconductor lasers

Roger P. Holmstrom; Edmund Meland; William Powazinik

doi:10.1117/12.43807

1 July 1991 New structure and method for fabricating InP/InGaAsP buried heterostructure semiconductor lasers

Roger P. Holmstrom, Edmund Meland, William Powazinik

Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43807
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

A fabrication technique for semiconductor lasers in the indium phosphide materials system which offers excellent reproducibility and uniformity in active layer and lateral cladding widths using a novel photolithographic technique and self-aligned etching processes has been developed. Lasers fabricated by this technique demonstrated a record modulation bandwidth of 24 GHz and intrinsic resonance frequencies greater than 20 GHz. Mesa and active layer widths are controllable to +/- 0.10 micrometers , and regrown lateral cladding in InP widths are 0.1 to 0.2 micrometers across the entire wafer. Specific contact resistances were less than 10-5 ohm-cm2.

Citation Download Citation

Roger P. Holmstrom, Edmund Meland, and William Powazinik "New structure and method for fabricating InP/InGaAsP buried heterostructure semiconductor lasers", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43807

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