Nonmetallic acid generators for i-line and g-line chemically amplified resists

William R. Brunsvold; Warren Montgomery; Bao Hwang

doi:10.1117/12.46385

1 June 1991 Nonmetallic acid generators for i-line and g-line chemically amplified resists

William R. Brunsvold, Warren Montgomery, Bao Hwang

Proceedings Volume 1466, Advances in Resist Technology and Processing VIII; (1991) https://doi.org/10.1117/12.46385
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

Here we report two novel nonmetallic acid generators, derived from N- hydroxy-2,3-diphenylmaleimide, which absorb in the Deep UV and Near UV regions and do not require sensitization by additives. We have formulated a base developable positive tone resist containing these acid generators and have demonstrated 0.6 micrometers resolution on g-line and i- line steppers with sensitivity less than 50 mJ/cm2. We will show data characterizing the new materials and describe lithographic results relating to the performance of the resist.

Citation Download Citation

William R. Brunsvold, Warren Montgomery, and Bao Hwang "Nonmetallic acid generators for i-line and g-line chemically amplified resists", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46385

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