Anodic oxides on HgZnTe

David Eger; Alex Zigelman

doi:10.1117/12.46506

1 August 1991 Anodic oxides on HgZnTe

David Eger, Alex Zigelman

Proceedings Volume 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches; (1991) https://doi.org/10.1117/12.46506
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

The formation of anodic oxides on HgZnTe has been studied and characterized by XPS technique. The physical properties of anodized p-type layers have been investigated by the differential Hall effect, photoconductivity, and photoluminescence measurements. It was found that the tendency to form surface inversion layers on HgZnTe by anodization is considerably lower than that for HgCdTe. There is a considerable increase in effective lifetime values and in photoluminescence intensities. In addition, significant differences between the voltametric analysis curves of HgZnTe and HgCdTe were observed. The results are discussed in view of the bonding characteristics of the two materials.

Citation Download Citation

David Eger and Alex Zigelman "Anodic oxides on HgZnTe", Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); https://doi.org/10.1117/12.46506

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