Simulation of the growth of Mo/Si multilayers

David B. Boercker; W. Lowell Morgan

doi:10.1117/12.51285

1 January 1992 Simulation of the growth of Mo/Si multilayers

David B. Boercker, W. Lowell Morgan

Proceedings Volume 1547, Multilayer Optics for Advanced X-Ray Applications; (1992) https://doi.org/10.1117/12.51285
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

The successful development of soft x-ray projection lithography will depend heavily on the production of efficient, durable optical components. A leading candidate for x-ray mirrors near 130 angstrom is multilayer structures made of alternating thin layers of Mo and Si. High- resolution electron microscopy reveals that the interface created by deposition of Mo on Si is much more diffuse than that produced by depositing Si on Mo. We have performed molecular dynamics simulations of the deposition process and observed significant penetration of the Si substrates by incident Mo atoms while Si atoms remain on the surface of the Mo substrates.

Citation Download Citation

David B. Boercker and W. Lowell Morgan "Simulation of the growth of Mo/Si multilayers", Proc. SPIE 1547, Multilayer Optics for Advanced X-Ray Applications, (1 January 1992); https://doi.org/10.1117/12.51285

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