Calculation of electron-optical characteristics for Gen I image intensifiers under the deflection and gating regime

Sergey V. Kolesnikov

doi:10.1117/12.60325

1 June 1992 Calculation of electron-optical characteristics for Gen I image intensifiers under the deflection and gating regime

Sergey V. Kolesnikov

Author Affiliations +

Proceedings Volume 1655, Electron Tubes and Image Intensifiers; (1992) https://doi.org/10.1117/12.60325
Event: SPIE/IS&T 1992 Symposium on Electronic Imaging: Science and Technology, 1992, San Jose, CA, United States

Abstract

An efficient method for calculating electron-optical characteristics of electrostatic electron- optical systems (EOS) for focusing and deflection (gating) in image intensifiers is proposed. Dwelling on this method based on perturbation theory (which in electron optics is usually called the aberration theory) the paper presents EOS characteristics estimated using software support for the relevant computer-aided design (CAD) system. Some examples of CAD of different EOS constructive implementations are provided.

Citation Download Citation

Sergey V. Kolesnikov "Calculation of electron-optical characteristics for Gen I image intensifiers under the deflection and gating regime", Proc. SPIE 1655, Electron Tubes and Image Intensifiers, (1 June 1992); https://doi.org/10.1117/12.60325

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