Indium-tin-oxide biased-gate technology

Lloyd B. Robinson; William E. Brown; Mingzhi Wei; A. R. Schaeffer; P. P. Bertling; Michael P. Lesser

doi:10.1117/12.135944

12 August 1992 Indium-tin-oxide biased-gate technology

Lloyd B. Robinson, William E. Brown, Mingzhi Wei, A. R. Schaeffer, P. P. Bertling, Michael P. Lesser

Proceedings Volume 1656, High-Resolution Sensors and Hybrid Systems; (1992) https://doi.org/10.1117/12.135944
Event: SPIE/IS&T 1992 Symposium on Electronic Imaging: Science and Technology, 1992, San Jose, CA, United States

Abstract

Ongoing experiments using thin electrically conducting transparent layers of Indium Tin Oxide to control the surface potential of thinned CCDs are described. The results are very encouraging with good uniform ultraviolet sensitivity being obtained from CCDs of different types and thinned by different processes. The enhanced response is stable in air and in vacuum for periods longer than a year. 2.

Citation Download Citation

Lloyd B. Robinson, William E. Brown, Mingzhi Wei, A. R. Schaeffer, P. P. Bertling, and Michael P. Lesser "Indium-tin-oxide biased-gate technology", Proc. SPIE 1656, High-Resolution Sensors and Hybrid Systems, (12 August 1992); https://doi.org/10.1117/12.135944

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