Temperature-dependent transition from two-dimensional to three-dimensional growth in highly strained InxGa1-xAs/GaAs (x>0.36) single quantum wells

S. M. Wang; Thorvald G. Andersson; M. J. Ekenstedt

doi:10.1117/12.137628

3 September 1992 Temperature-dependent transition from two-dimensional to three-dimensional growth in highly strained In_xGa_1-xAs/GaAs (x>0.36) single quantum wells

S. M. Wang, Thorvald G. Andersson, M. J. Ekenstedt

Author Affiliations +

Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137628
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

The critical layer thickness (CLT), based on the transition from two dimensional to three dimensional (3D) growth, was investigated by the use of photoluminescence in highly strained In_xGa_1-xAs/GaAs (0.36

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S. M. Wang, Thorvald G. Andersson, and M. J. Ekenstedt "Temperature-dependent transition from two-dimensional to three-dimensional growth in highly strained In_xGa_1-xAs/GaAs (x>0.36) single quantum wells", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); https://doi.org/10.1117/12.137628

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