Paper
12 August 1992 Producibility of GaAs quantum-well infrared photodetector arrays
Barry F. Levine, Clyde G. Bethea, Venkat S. Swaminathan, J. W. Stayt Jr., Ronald E. Leibenguth, Kenneth G. Glogovsky, William A. Gault
Author Affiliations +
Abstract
We discuss in detail the producibility issues associated with GaAs/AlxGa1-xAs quantum well infrared photodetectors (QWIPs). Excellent uniformity in growth (thickness, doping, and Al concentration) and in processing are expected to lead to high yield, high performance large area infrared imaging arrays.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Barry F. Levine, Clyde G. Bethea, Venkat S. Swaminathan, J. W. Stayt Jr., Ronald E. Leibenguth, Kenneth G. Glogovsky, and William A. Gault "Producibility of GaAs quantum-well infrared photodetector arrays", Proc. SPIE 1683, Infrared Focal Plane Array Producibility and Related Materials, (12 August 1992); https://doi.org/10.1117/12.137769
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Cited by 1 scholarly publication.
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KEYWORDS
Quantum well infrared photodetectors

Gallium arsenide

Sensors

Aluminum

Imaging arrays

Infrared imaging

Doping

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