Paper
6 April 1993 Good-quality silica optical waveguides formed by low-temperature-oxidation chemical vapor deposition technique
Elio Cantatore, Giosue Iseni, Giorgio U. Pignatel
Author Affiliations +
Proceedings Volume 1794, Integrated Optical Circuits II; (1993) https://doi.org/10.1117/12.141885
Event: Fibers '92, 1992, Boston, MA, United States
Abstract
A new reactor--namely Select from Watkins Johnson--which is capable to deposit thick films of doped and undoped silicon oxide by low temperature oxidation (T < 500 degree(s)C) from silane and oxygen, has been used to realize 6 micrometers thick silica waveguides which are three- modal at a wavelength of 1.15 micrometers with an attenuation loss better than 1.0 dB/cm on as deposited film.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elio Cantatore, Giosue Iseni, and Giorgio U. Pignatel "Good-quality silica optical waveguides formed by low-temperature-oxidation chemical vapor deposition technique", Proc. SPIE 1794, Integrated Optical Circuits II, (6 April 1993); https://doi.org/10.1117/12.141885
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Waveguides

Silicon

Chemical vapor deposition

Silica

Semiconducting wafers

Polysomnography

Signal attenuation

Back to Top