Paper
21 May 1993 Micron and submicron interconnect modeling (Abstract Only)
Vijai K. Tripathi
Author Affiliations +
Abstract
The techniques to study signal delay distortion and crosstalk in high density VLSI/ULSI micron and submicron interconnects are reviewed. These include numerical techniques based on the method of characteristics and the transform based techniques as well as frequency and time domain measurement techniques. The limitations of the classical modeling and measurement techniques in the submicron metallization regime are examined.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vijai K. Tripathi "Micron and submicron interconnect modeling (Abstract Only)", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); https://doi.org/10.1117/12.145456
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Distortion

Time metrology

RELATED CONTENT

Experimental measurement of PMD effects
Proceedings of SPIE (February 09 1993)
Absolute pattern placement metrology on wafers
Proceedings of SPIE (August 04 1993)
CD-SEM image-distortion measured by view-shift method
Proceedings of SPIE (April 28 2011)
The Use Of A Perot Fabry Velocimeter To The Study...
Proceedings of SPIE (January 09 1984)

Back to Top