Sensitivity of s-parameter data of metal semiconductor field effect transistor to the source and gate resistances

G. G. Silvestri; Venkata S. Rao Gudimetla

doi:10.1117/12.145459

21 May 1993 Sensitivity of s-parameter data of metal semiconductor field effect transistor to the source and gate resistances

G. G. Silvestri, Venkata S. Rao Gudimetla

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Proceedings Volume 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations; (1993) https://doi.org/10.1117/12.145459
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

Analytical expressions for the sensitivities of the S-parameters of a MESFET are presented. These expressions are useful for optimizing the gate and source metallization resistances for design of MESFETs. The final expressions are given in terms of general circuit impedances and therefore can be used in analyzing other solid state three terminal active devices.

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G. G. Silvestri and Venkata S. Rao Gudimetla "Sensitivity of s-parameter data of metal semiconductor field effect transistor to the source and gate resistances", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); https://doi.org/10.1117/12.145459

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KEYWORDS

Field effect transistors

Roentgenium

Resistance

Metals

Semiconductors

Microwave radiation

Amplifiers

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