Process optimization of APEX-E

Karen E. Petrillo

doi:10.1117/12.148936

4 August 1993 Process optimization of APEX-E

Karen E. Petrillo

Proceedings Volume 1926, Integrated Circuit Metrology, Inspection, and Process Control VII; (1993) https://doi.org/10.1117/12.148936
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

Excimer laser lithography combined with chemically amplified resists offers a viable approach to lithography at 0.5 micrometers and below. APEX-E, a positive tone deep-uv resist used in conjunction with a 0.44 NA excimer laser stepper is capable of 0.35 micrometers resolution. To improve the process window for this resist while reducing the performance variability, the Taguchi method of quality control was employed. The baseline process for APEX-E was characterized, then subsequently used as a comparison to the optimized process as suggested by the Taguchi experiments.

Citation Download Citation

Karen E. Petrillo "Process optimization of APEX-E", Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); https://doi.org/10.1117/12.148936

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