Hot-electron-induced light emission and impact ionization in GaAs-based devices

Carlo Tedesco; Claudio Canali; Manfredo Manfredi; Andrea Neviani; Enrico Zanoni

doi:10.1117/12.162763

19 November 1993 Hot-electron-induced light emission and impact ionization in GaAs-based devices

Carlo Tedesco, Claudio Canali, Manfredo Manfredi, Andrea Neviani, Enrico Zanoni

Author Affiliations +

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162763
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

In this paper, we characterize impact ionization effects in GaAs MESFETs, in AlGaAs/GaAs High Electron Mobility Transistors, HEMTs, in AlGaAs/InGaAs Pseudo-Morphic High Electron Mobility Transistors, PM-HEMTs, and AlGaAs/GaAs Heterojunction Bipolar Transistors, HBTs. Then, we correlate impact ionization and electroluminescence in each type of device, providing a deeper insight into the mechanisms responsible for the emission of photons in the high electric field regime. Finally, conclusions follow in Section 4.

Citation Download Citation

Carlo Tedesco, Claudio Canali, Manfredo Manfredi, Andrea Neviani, and Enrico Zanoni "Hot-electron-induced light emission and impact ionization in GaAs-based devices", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162763

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