Spectroscopic ellipsometry characterisatiion of strained Si1-xGex multi-quantum wells for optoelectronic applications

Christopher Pickering; Roger Timothy Carline; David J. Robbins; Weng Y. Leong; Anthony D. Pitt; Anthony G. Cullis

doi:10.1117/12.162778

19 November 1993 Spectroscopic ellipsometry characterisatiion of strained Si_1-xGe_x multi quantum wells for optoelectronic applications

Christopher Pickering, Roger Timothy Carline, David J. Robbins, Weng Y. Leong, Anthony D. Pitt, Anthony G. Cullis

Author Affiliations +

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162778
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

Spectroscopic ellipsometry has been used to determine composition and thicknesses of pseudo- morphic Si/Si_1-xGe_x multilayer structures. The effects of composition, strain, and quantum confinement on dielectric functions have been determined. The technique has been used to assess multi-quantum well structures with well thicknesses down to 20 angstroms.

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Christopher Pickering, Roger Timothy Carline, David J. Robbins, Weng Y. Leong, Anthony D. Pitt, and Anthony G. Cullis "Spectroscopic ellipsometry characterisatiion of strained Si_1-xGe_x multi quantum wells for optoelectronic applications", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162778

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