Reactive ion etching of Al alloy and silicon dioxide films in a rotating magnetic field

Masafumi Tanabe; Akio Matsuda; Takeshi Sunada; Taro Nomura; Hideki Fujimoto; Toshio Hayashi

doi:10.1117/12.167343

15 February 1994 Reactive ion etching of Al alloy and silicon dioxide films in a rotating magnetic field

Masafumi Tanabe, Akio Matsuda, Takeshi Sunada, Taro Nomura, Hideki Fujimoto, Toshio Hayashi

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167343
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

A diode type magnetically enhanced reactive ion etching system was used for Al alloy films and a triode type magnetically enhanced reactive ion etching system was used for SiO₂ films. A same rotational permanent magnet was used for the diode and triode reactors. Excellent etching characteristics of TiN/Al-1%Si-0.5%Cu/TiN and SiO₂ films were obtained at low pressure of about 1Pa. Simulations were also performed for drift motions of secondary electrons in the cathode sheath.

Citation Download Citation

Masafumi Tanabe, Akio Matsuda, Takeshi Sunada, Taro Nomura, Hideki Fujimoto, and Toshio Hayashi "Reactive ion etching of Al alloy and silicon dioxide films in a rotating magnetic field", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167343

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