Characterization of semiconductor device structures by modulation spectroscopy

Hao Qiang; Dong Yan; Yichun Yin; Fred H. Pollak

doi:10.1117/12.176859

26 May 1994 Characterization of semiconductor device structures by modulation spectroscopy

Hao Qiang, Dong Yan, Yichun Yin, Fred H. Pollak

Proceedings Volume 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V; (1994) https://doi.org/10.1117/12.176859
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

This paper reviews the use of modulation spectroscopy for the characterization of a wide variety of semiconductor device structures. Some systems that will be discussed include pseudomorphic GaAlAs/InGaAs/GaAs modulation-doped quantum-well high-electron-mobility transistors (including the 300K determination of the 2D electron gas density), GaAlAs/GaAs, InP/InGaAs, InGaP/GaAs, InAlAs/InGaAs, and InGaAs/GaAs heterojunction bipolar transistors (including the determination of the built-in fields/doping levels in the emitter and collector regions), GaAs/GaAlAs quantum well IR detectors, quantum well lasers, etc. Particular attention will be paid to nondestructive, contactless techniques such as photoreflectance and contactless electroreflectance that can be performed on entire wafers.

Citation Download Citation

Hao Qiang, Dong Yan, Yichun Yin, and Fred H. Pollak "Characterization of semiconductor device structures by modulation spectroscopy", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); https://doi.org/10.1117/12.176859

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