GaAs/InGaP/AlGaAs quantum well infrared photodetectors

Patamaporn Keshagupta; Farhad Radpour

doi:10.1117/12.177144

2 June 1994 GaAs/InGaP/AlGaAs quantum well infrared photodetectors

Patamaporn Keshagupta, Farhad Radpour

Author Affiliations +

Proceedings Volume 2145, Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion; (1994) https://doi.org/10.1117/12.177144
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

In this paper, a new quantum-well IR photodetector based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8 to 12 micrometers range, and in the lower dark current.

Citation Download Citation

Patamaporn Keshagupta and Farhad Radpour "GaAs/InGaP/AlGaAs quantum well infrared photodetectors", Proc. SPIE 2145, Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion, (2 June 1994); https://doi.org/10.1117/12.177144

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