Material modifications of the noise properties of gain-guided semiconductor microlasers

Ewan M. Wright; Michael Rivera

doi:10.1117/12.178524

30 June 1994 Material modifications of the noise properties of gain-guided semiconductor microlasers

Ewan M. Wright, Michael Rivera

Author Affiliations +

Proceedings Volume 2146, Physics and Simulation of Optoelectronic Devices II; (1994) https://doi.org/10.1117/12.178524
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

This paper describes a noise theory for semiconductor microlasers which combines a microscopic description of the semiconductor medium and also macroscopic field propagation effects. Such a model is particularly apt for gain-guided systems whose noise properties can show significant deviations from sipmle plane-wave models.

Citation Download Citation

Ewan M. Wright and Michael Rivera "Material modifications of the noise properties of gain-guided semiconductor microlasers", Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); https://doi.org/10.1117/12.178524

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