Paper
17 May 1994 Comparison of deep-UV reflection control methods for interconnect layers
Joseph J. Ferrari, Sasha K. Dass
Author Affiliations +
Abstract
The swing curve, more specifically the reflectance versus resist thickness, has been measured for APEX-E coated on 3 different film stacks for interconnects: Titanium nitride (TiN) capped aluminum, Brewer ARC DC9 coated aluminum, and CD9 coated on the TiN capped aluminum. The exposure and focus latitudes have been measured for each of the above film stacks along with pre-etch and post-etch cross section profiles. It appears that either the TiN or CD9 could be used as an anti-reflective layer (ARL) based on the swing curve alone, however, the TiN capped aluminum degrades the APEX-E profile to such an extent that TiN cannot be used as an effective ARL. Similar data, swing curves and process latitudes, were collected for the contact film stacks of silicon dioxide on aluminum, and CD9 coated silicon dioxide on aluminum. The swing curves showed erratic behavior, which is most likely due to oxide thickness variations across the wafer. Measurements of the across wafer contact size variation were taken to quantify the improvement in critical dimension control that results from the use of an ARL.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joseph J. Ferrari and Sasha K. Dass "Comparison of deep-UV reflection control methods for interconnect layers", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175460
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KEYWORDS
Tin

Aluminum

Reflectivity

Semiconducting wafers

Etching

Deep ultraviolet

Oxides

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