Effect of the OH ions on SiO2/SPG/SiO2/InSb device stability

Hongyi Su; Weiguo Sun

doi:10.1117/12.189244

7 October 1994 Effect of the OH ions on SiO₂/SPG/SiO₂/InSb device stability

Hongyi Su, Weiguo Sun

Proceedings Volume 2274, Infrared Detectors: State of the Art II; (1994) https://doi.org/10.1117/12.189244
Event: SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, 1994, San Diego, CA, United States

Abstract

A metal-insulator-semiconductor device, Auger spectroscopy and infrared absorption spectrum have been used to study the impurities in phosphorosilicate glass (sio₂/SPG/sio₂)/InSb. The hydroxyl ions which caused current leakage during high vacuum outgassing were investigated. The current leakage mechanism in InSb p/n diodes have been discussed. The reasons for hydroxyl ions remaining in the passivation films were mentioned.

Citation Download Citation

Hongyi Su and Weiguo Sun "Effect of the OH ions on SiO₂/SPG/SiO₂/InSb device stability", Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994); https://doi.org/10.1117/12.189244

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available