Nondestructive method for visualization of free carrier accumulations in standard semiconductors wafers

Oleg V. Astafiev; Victor P. Kalinushkin; Vladimir A. Yuryev

doi:10.1117/12.195884

12 December 1994 Nondestructive method for visualization of free carrier accumulations in standard semiconductors wafers

Oleg V. Astafiev, Victor P. Kalinushkin, Vladimir A. Yuryev

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Proceedings Volume 2332, Second International Symposium on Advanced Laser Technologies; (1994) https://doi.org/10.1117/12.195884
Event: Advanced Laser Technologies: International Symposium, 1993, Prague, Czech Republic

Abstract

A new non-destructive method for visualization of free carrier accumulations in standard semiconductors wafers (VCA or scanning low-angle light scattering) is being proposed first. The method has been applied to visualize large-scale electrically active defect accumulations in a number of semiconductor crystals. It allows mapping and investigating technological semiconductor wafers, being sensitive to low concentration of free carriers in the accumulations.

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Oleg V. Astafiev, Victor P. Kalinushkin, and Vladimir A. Yuryev "Nondestructive method for visualization of free carrier accumulations in standard semiconductors wafers", Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); https://doi.org/10.1117/12.195884

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