Direct electro-optic measurement of the internal fields of GaAs photoconductive switches

R. Aaron Falk; Jeff C. Adams; C. David Capps; Stuart G. Ferrier; Jeffrey A. Krinsky

doi:10.1117/12.198645

4 January 1995 Direct electro-optic measurement of the internal fields of GaAs photoconductive switches

R. Aaron Falk, Jeff C. Adams, C. David Capps, Stuart G. Ferrier, Jeffrey A. Krinsky

Proceedings Volume 2343, Optically Activated Switching IV; (1995) https://doi.org/10.1117/12.198645
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States

Abstract

The electric fields of bulk (100) and surface (111) GaAs high-voltage photoconductive switches were imaged utilizing the electro-optic effect of the semi-insulating GaAs substrate. Experimental methodology for obtaining the images is described along with a self-calibrating data reduction algorithm. Use of the technique for observing fabrication defects and time dependent field nonuniformities is shown.

Citation Download Citation

R. Aaron Falk, Jeff C. Adams, C. David Capps, Stuart G. Ferrier, and Jeffrey A. Krinsky "Direct electro-optic measurement of the internal fields of GaAs photoconductive switches", Proc. SPIE 2343, Optically Activated Switching IV, (4 January 1995); https://doi.org/10.1117/12.198645

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