Luminescence properties of ZnxMg1-xSe layers

Waclaw Bala; Franciszek Firszt; Janusz Dzik; Adam Gapinski; Grzegorz Glowacki

doi:10.1117/12.224963

16 October 1995 Luminescence properties of ZnxMg1-xSe layers

Waclaw Bala, Franciszek Firszt, Janusz Dzik, Adam Gapinski, Grzegorz Glowacki

Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224963
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland

Abstract

This work deals with the study of luminescence properties of Zn_xMg_1-xSe layers prepared by different methods. Zn_xMg_1-xSe mixed crystal layers were obtained by: (a) thermal diffusion of Mg metal in the temperature range 1050 K - 1200 K into ZnSe single crystal grown by Bridgman method, and (b) epitaxial growth on (001) GaAs and (111) ZnTe substrates by MBE using elemental Zn, Se and Mg sources. The luminescence spectra of Zn_xMg_1-xSe layers grown on (001) GaAs and (111) ZnTe substrates are dominated by narrow blue and violet emission bands with maxima positioned at about 3.05 - 3.28 eV, 2.88 - 3.04 eV, and 2.81 - 2.705 eV.

Citation Download Citation

Waclaw Bala, Franciszek Firszt, Janusz Dzik, Adam Gapinski, and Grzegorz Glowacki "Luminescence properties of ZnxMg1-xSe layers", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224963

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